Electrical Resistivity of the Monoatomic Metallic Layer

Morphology and electrical resistivity of metallic nanostructures

The electrical resistivity r of Au, Al and Cu films prepared by thermal evaporation with thickness range from 3 to 100 nm on glass substrates were studied. The r value was measured and theoretically evaluated by the Fuchs–Sondheimer (F–S), the Mayadas–Shatzkes (M–S), and the combined models. Measured r values in Al films were about seven times minor than for Au and Cu films for the minimum (3 n...

Dip coating of silica layer on melt-spun Finemet ribbons: surface morphology and electrical resistivity changes

In this study, melt-spun Finemet ribbons were coated by a thin layer of SiO2 using dip coating method. Amorphous ribbon prepared by melt spinning method and dip coating were done by using a solution of tetraethylen orthosilicate as a SiO2 precursor, ethanol as solvent and distilled water for hydrolysis. Different thicknesses of SiO2 layer, namely 304, 349, 451, 526 and 970 nm were obtained prop...

ELECTRICAL RESISTIVITY OF NpTe

Effect of surface bond-order loss on electrical resistivity of metallic polycrystalline thin films

The effect of surface bond-order loss on the classical resistivity of metallic polycrystalline thin films is studied. The potential barriers due to grain boundaries considered here contain square-well depressions on both sides taking into account the effect of surface bond-order loss for the grains in a film. Electron scattering by film surfaces is also considered following the lines of Fuchs’ ...

6 N ov 1 99 9 Electrical resistivity of a thin metallic film

The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a freeelectron model calculation and confirmed by an ab initio relativistic KorringaKohn-Rostoker computation. The low-temperature resistivity is found to be zero for a free-standing film (reflecting boundary conditions) but nonzero when the film is ...